13114 tk/im tc-00003091 /31010ea tk im /o1003tn (koto)/92093ha (kt)/4107ki/3045mw,ts no. 1787-1/4 semiconductor components industries, llc, 2014 january, 2014 http://onsemi.com 2SB1121 applications ? voltage regulators, relay drivers, lamp drivers, electrical equipment features ? adoption of fbet, mbit processes ? low collector to emitter saturation voltage ? large current capacity and wide soa ? fast switching speed ? ultrasmall size making it easy to provide high-density, small-sized hybrid ic?s specifications absolute maximum ratings at ta = 25 c parameter symbol conditions ratings unit collector to base voltage v cbo -30 v collector to emitter voltage v ceo -25 v emitter to base voltage v ebo -6 v collector current i c -2 a collector current (pulse) i cp -5 a continued on next page. package dimensions unit : mm (typ) 7007b-004 bipolar transisto r -25v, -2a, low vce(sat) pnp single pcp product & package information ? package : pcp ? jeita, jedec : sc-62, sot-89, to-243 ? minimum packing quantity : 1,000 pcs./reel packing type: td marking electrical connection orderin g numbe r : en1787c 2 3 1 bd lot no. td 1:base 2:collector 3 : emitter pcp 2.5 4.0 1.0 1.5 0.5 0.4 3.0 4.5 1.6 0.4 123 1.5 0.75 top view bottom view 2SB1121s-td-e 2SB1121t-td-e
2SB1121 no. 1787-2/4 continued from preceding page. parameter symbol conditions ratings unit collector dissipation p c 500 mw when mounted on ceramic substrate (250mm 2 0.8mm) 1.3 w junction temperature t j 150 c storage temperature tstg -55 to +150 c electrical characteristics at ta = 25 c parameter symbol conditions ratings unit min typ max collector cutoff current i cbo v cb =-20v, i e =0a -0.1 a emitter cutoff current i ebo v eb =-4v, i c =0a -0.1 a dc current gain h fe 1 v ce =-2v, i c =-100ma 140* 400* h fe 2 v ce =-2v, i c =-1.5a 65 gain-bandwidth product f t v ce =-10v, i c =-50ma 150 mhz output capacitance cob v cb =-10v, f=1mhz 32 pf collector to emitter saturation voltage v ce (sat) i c =-1.5a, i b =-75ma -0.35 -0.6 v base to emitter saturation voltage v be (sat) i c =-1.5a, i b =-75ma -0.85 -1.2 v collector to base breakdown voltage v (br)cbo i c =-10 a, i e =0a -30 v collector to emitter breakdown voltage v (br)ceo i c =-1ma, r be = -25 v emitter to base breakdown voltage v (br)ebo i e =-10 a, i c =0a -6 v turn-on time t on see specified test circuit 60 ns storage time t stg 350 ns fall time t f 25 ns *: the 2SB1121 is classified by 100ma h fe as follows: rank s t h fe 140 to 280 200 to 400 switching time test circuit ordering information device package shipping memo 2SB1121s-td-e 2SB1121t-td-e pcp 1,000pcs./reel pb-free stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended oper ating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty.
2SB1121 no. 1787-3/4
2SB1121 ps no. 1787-4/4 outline drawing land pattern example 2SB1121s-td-e 2SB1121t-td-e on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc). scillc owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of scillc?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc mak es no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability ar ising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequentia l or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s techn ical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorize d for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other appli cation in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of persona l injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture o fthe part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws a nd is not for resale in any manner. mass (g) unit 0.058 *forreference mm unit: mm 2.2 1.0 1.8 1.5 0.9 3.7 1.5 3.0 1.0 45 45
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